LONDON — Toshiba Corp. has developed technology for a nanowire transistor, a major candidate for system LSI in the 16-nm generation and beyond. The company said it has achieved 1-mA per micron ...

The EPC2016 is Efficient Power Conversion's newest enhancement mode gallium nitride power transistor. The EPC2016 is a 3.36 mm 2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

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How the first transistor evolved to meet new and emerging application demands as underlying structures transform and multi-die systems gained further adoption. How transistors have enabled the ...