With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of ...
SAN JOSE, Calif. — For next-generation memory production, 193-nm lithography with self-aligned double-patterning (SADP) are the technology of choices over rival schemes, according to an analyst.
DPT is a critical technique for ensuring printability of device and interconnect layers in 20-nm IC manufacturing. However, splitting layers into two masks can introduce timing variations as a ...
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