The HFA3128 is an ultra high frequency transistor array that is fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated ...

High-frequency transistor limits can be extended and circuit gain increased through a new technique that neutralizes the detrimental effect of emitter inductance. This parameter has a serious effect ...

EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Dec. 1, 2014 EPC announces the ...

Oki Electric Industry of Japan has begun shipping evaluation samples of its high-frequency output HEMT (high-electron-mobility transistor), made with GaN semiconductor. The chip achieves a peak output ...

Researchers have found a low-cost way for backscatter radios to support high-throughput communication and 5G-speed Gb/sec data transfer using only a single transistor when previously it required ...

THE properties of the amplifier to be described are entirely due to the type of transistor used, and the purpose of this communication is to report on its suitability for the amplification of ...

The Professional Research Experience Program (PREP) is a special partnership between the National Institute of Standards and Technology (NIST) and the University of Colorado Boulder. PREP provides ...

David Sarnoff’s name is attached to an award given by the IEEE, the big technical professional association. This year, the recipient is an expert in high-frequency transistor technology. Mark J.W.

The remarkable increases in computer speed over the last few decades could be approaching an end, in part because silicon is reaching its physical limits. But this past December, in a small Washington ...