Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

This fact leaves one conclusion: Now is the time to upgrade before things get worse. But here’s another consideration: You ...

The evaluation samples incorporate a newly developed in-house controller for UFS 5.0 and KIOXIA BiCS FLASH™ generation 8 3D ...

MRAM is one of the most promising emerging memory technologies we have, as it can theoretical improve on nearly every metric of existing DRAM and SRAM technologies. However, MRAM requires significant ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

Organic transistor memory devices integrate organic semiconducting materials with field‐effect transistor architectures to achieve nonvolatile data storage. These devices harness charge trapping ...

Which fragile format stole your files? Take a trip down memory (card) lane ...