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IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...

Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...

Ampleon has announced a high-750W RF power transistor offering 72.5% at 915MHz, built on the firm’s Gen9HV 50V process. Called BLF0910H9LS750P, it operates from 902 to 928MHz making it suitable, ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

NXP Semiconductors and Freescale have made additions to their rf power transistor portfolios in advance of the forthcoming International Microwave Symposium. NXP has expanded its eighth generation ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

By combining the high power density of their GaN transistors with the excellent thermal properties of multilayer Multi-Mix (R) Microtechnology, we are confident that we will develop new benchmarks in ...

Ampleon has released the first of a family of RF power devices based on its Advanced Rugged Technology (ART) derivative of the ninth-generation high-voltage LDMOS process technology. The process has ...

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.