Microsemi Corporation announced its 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high-power air traffic control (ATC), secondary surveillance radio (SSR) applications.
The MRF6VP3450H 50-V laterally diffused MOS (LDMOS) RF power transistor is offered as providing 50% higher output power than competing UHF TV broadcast solutions and demonstrates an industry-leading ...
Freescale Semiconductor, supplier of high-power radio-frequency (RF) power transistors for 2.5G and 3G wireless base-station amplifiers, has shipped more than 10 million high-power, high-frequency RF ...
CARLSBAD, Calif.--(BUSINESS WIRE)--MaxLinear Inc. (NASDAQ: MXL) and RFHIC (KOSDAQ: 218410) today announced a collaboration to deliver a production-ready 400MHz Power Amplifier (PA) solution for 5G ...
Based on Silicon-Germanium Carbon (SiGe:C) process technology, the BFP740 HBT family of RF transistors targets a wide range of RF and wireless applications, such as wireless LANs. The transistors, ...
NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...
A new technical paper titled “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure” was published by researchers at Purdue University and won the 2022 Device ...
NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H. 1.5kW continuous wave is available at 50V, and the device works over 1.8–500MHz. The transistor is ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results