WEST LAFAYETTE, Ind. – Researchers have experimentally demonstrated how to harness a property called negative capacitance for a new type of transistor that could reduce power consumption, validating a ...
Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...
(Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power efficient and scaleable semiconductor devices — components that use minimal ...
A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...
The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...
In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...
Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.
How the first transistor evolved to meet new and emerging application demands as underlying structures transform and multi-die systems gained further adoption. How transistors have enabled the ...
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