Abstract: We report germanium (Ge) doping in tin oxide (SnO2), which led to achieving a record ON–OFF current ratio of ~109 and a subthreshold slope (SS) of 77 mV/decade in a bottom-gated n-type ...
Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, and Singapore-MIT Alliance, National University of Singapore, 4 ...
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